Effect van warmtedissipatie materialen Ost40n120hmf 10µ S tolerantie voor kortsluiting 1200 V, 40 A, FRD, ingebouwd in tot-247n IGBT

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Microwave Transistor
• Working Frequency: High Frequency
• Model NR.: OST40N120HMF TO-247N
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transportpakket: Carton
• Specificatie: 35.3x30x37.5/60x23x13
• Handelsmerk: Orientalsemi
• Oorsprong: China
• Gs-Code: 8541290000
• Productiecapaciteit: Over 1kk/Month

Beschrijving

General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features

• Advanced TGBTTM technology
• Excellent conduction and switching loss
• Excellent stability and uniformity
• Fast and soft antiparallel diode

Applications

• Induction converters
• Uninterruptible power supplies

Key Performance Parameters

 

Parameter	Value	Unit
VCES, min @ 25°C	1200	V
Maximum junction temperature	175	°C
IC, pulse	160	A
VCE(sat), typ @ VGE=15V	1.45	V
Qg	214	nC

Marking Information

 

Product Name	Package	Marking
OST40N120HMF	TO247	OST40N120HM

 

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	1200	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤0.5µs, D<0.001		±25	V
Continuous collector current^1), TC=25ºC	IC	56	A
Continuous collector current^1), TC=100ºC		40	A
Pulsed collector current^2), TC=25ºC	IC, pulse	160	A
Diode forward current^1), TC=25ºC	IF	56	A
Diode forward current^1), TC=100ºC		40	A
Diode pulsed current^2), TC=25ºC	IF, pulse	160	A
Power dissipation^3), TC=25ºC	PD	357	W
Power dissipation^3), TC=100ºC		179	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE=15 V, VCC≤600 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj=150 °C	tSC	10	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.42	°C/W
Diode thermal resistance, junction-case	RθJC	0.75	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

 

Electrical Characteristics at Tvj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	1200			V	VGE=0 V, IC=0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.45	1.8	V	VGE=15 V, IC=40 A Tvj=25°C
			1.65		V	VGE=15 V, IC=40 A, Tvj =125°C
			1.8			VGE=15 V, IC=40 A, Tvj =175°C
Gate-emitter threshold voltage	VGE(th)	4.8	5.8	6.8	V	VCE=VGE, ID=0.5 mA
Diode forward voltage	VF		1.9	2.1	V	VGE=0 V, IF=40 A Tvj =25°C
			1.6			VGE=0 V, IF=40 A, Tvj =125°C
			1.5			VGE=0 V, IF=40 A, Tvj =175°C
Gate-emitter leakage current	IGES			100	nA	VCE=0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE=1200V, VGE=0 V

 

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		11270		pF	VGE=0 V, VCE=25 V, ƒ=100 kHz
Output capacitance	Coes		242		pF
Reverse transfer capacitance	Cres		10		pF
Turn-on delay time	td(on)		120		ns	VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A
Rise time	tr		88		ns
Turn-off delay time	td(off)		246		ns
Fall time	tf		160		ns
Turn-on energy	Eon		3.14		mJ
Turn-off energy	Eoff		1.02		mJ
Turn-on delay time	td(on)		112		ns	VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A
Rise time	tr		51		ns
Turn-off delay time	td(off)		284		ns
Fall time	tf		148		ns
Turn-on energy	Eon		1.32		mJ
Turn-off energy	Eoff		0.53		mJ

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		214		nC	VGE=15 V, VCC=960 V, IC=40 A
Gate-emitter charge	Qge		103		nC
Gate-collector charge	Qgc		40		nC

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		293		ns	VR=600 V, IF=40 A, diF/dt=500 A/μs Tvj = 25°C
Diode reverse recovery charge	Qrr		2.7		μC
Diode peak reverse recovery current	Irrm		25		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.

 

Version 1: TO247-P package outline dimension

Ordering Information
 

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-P	30	11	330	6	1980

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OST40N120HMF	TO247	yes	yes	yes

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

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