Type: | Diffuse Reflection Type Photoelectric Sensor |
---|---|
Output Signal Type: | Switching Type |
Production Process: | Integration |
Material: | Metal |
Feature: | SemiConductor |
IP Rating: | IP65 |
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Model | PM08-D03PO |
Detection Method | Diffuse Reflection |
Detection Distance | 30mm(White Paper30*30mm) |
Light Source | Infrared Photodiode(940nm) |
Working Voltage | 12~24V DC±10% ripple(p-p)below 10% |
Current Consumption | ≤30mA |
Output Mode | PNP open collector |
Switch Mode | L.on(light entry action) |
Circuit Protection | Short circuit protection,reverse polarity protection,anti-mutual interference protection |
Ambient Illuminance | Sunlight≤10,000 Lux,incandescent lamp≤3,000 Lux |
Ambient Temperature | Working temperature: -25°C~+55°C; Storage temperature: -30°C~+70°C (no freezing,no condensation) |
Ambient Humidity | Working temperature: 30~85%RH; Storage temperature: 35~95%RH (no condensation) |
Insulation Resistance | >20MΩ |
Vibration Resistance | 10~55Hz,1.5mm amplitude,2 hours in each of the three directions of X,Y and Z |
Protection Degree | IP65 |
Connection Method | 2M 3-core cable |
Material | Housing: stainless steel |
Connecter | Screw |
Response Time | Action and reset: 3ms or less each |
Weight | ≈80g |
Difference | <20% |
Withstand Voltage | 500V/AC 50/60Hz 1minute |
Impact Resistance | 500m/s²,X,Y,Z 3 times in each direction |
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